Siltronic AG Advances AlN Crystal Growth for Power Electronics and UV Photonics

On June 26, 2025, a collaboration between the Leibniz Institute for Crystal Growth (IKZ), PVA TePla AG, and Siltronic AG heralded a new era in semiconductor research. These industry leaders announced a project to advance aluminum nitride (AlN) crystal production, scaling substrates from 2-inch to 4-inch diameters. This initiative aims to benefit high-power electronics and UV photonics.

AlN is renowned for its high electric field strength and superior thermal conductivity, essential for energy-efficient and robust device designs. The project's ultimate goal is transforming AlN research into industrial manufacturing, significantly impacting Europe's semiconductor material industry.

IKZ, PVA TePla, and Siltronic fuse their expertise to foster Europe's technological independence, setting the stage for advancements in electromobility, renewable energy, and medical applications.